Electron spin-based information shuttling for a computer system

DWPI Title: Silicon metal-oxide semiconductor device for transporting spin-polarized single electron, has transport control logic to increase voltage while decrease voltage, localization of single electron is transferred from first to second electrode
Abstract: A silicon metal-oxide semiconductor device transports a spin-polarized single electron. An array of silicon quantum dot electrodes is arranged atop a silicon dioxide layer of a silicon metal-oxide semiconductor. The array comprises at least a first electrode and a second electrode adjacent to the first electrode. A transport control logic for individually controls a voltage applied to the electrodes. The transport control logic is configured to gradually decrease a voltage at the first electrode while gradually increasing a voltage at the second electrode. Localization of the single electron is adiabatically transferred from the first electrode to the second electrode while maintaining a desired energy gap between a ground state and a first excited state of the single electron.
Use: Silicon metal-oxide semiconductor device for transporting spin-polarized single electron.
Advantage: By gradually increasing voltage while simultaneously gradually increasing voltage and gradually decreasing voltage, transport control logic maintains the energy gap for spin-polarized electron above desired energy gap at time.
Novelty: The silicon metal-oxide semiconductor device (100) has an array of silicon quantum dot electrodes (110) arranged atop a silicon dioxide layer of a silicon metal-oxide semiconductor. The array comprises a first electrode (128) and a second electrode (130) adjacent to the first electrode. A transport control logic (116) for individually controlling a voltage applied to the electrodes, and is configured to gradually increase a voltage at the second electrode while gradually decreasing a voltage at the first electrode. The localization of the single electron is adiabatically transferred from the first electrode to the second electrode while maintaining a desired energy gap between a ground state and a first excited state of the single electron.
Filed: 12/16/2016
Application Number: US15381819A
Tech ID: SD 13929.0
This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention.
Data from Derwent World Patents Index, provided by Clarivate
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