Tunable ionic electronic transistor
| DWPI Title: Tunable ionic electronic transistor device i.e. complementary metal-oxide-semiconductor transistor device, has drain electrode contact with channel layer, where ions migrate from electrochemical gate layer to channel layer |
| Abstract: Various technologies pertaining to a transistor having a variable-conductance channel with a non-volatile tunable conductance are described herein. The transistor comprises source and drain electrodes separated by a conducting channel layer. The conducting channel layer is separated from an electrochemical gate (ECG) layer by an electrolyte layer that prevents migration of electrons between the channel and the ECG but allows ion migration. When a voltage is applied between the channel and the ECG, electrons flow from one to the other, which causes a migration of ions from the channel to the ECG or vice versa. As ions move into or out of the channel layer, the conductance of the channel changes. When the voltage is removed, the channel maintains its conductance state. |
| Use: Tunable ionic electronic transistor device i.e. complementary metal-oxide-semiconductor (CMOS) transistor device for use in an electronic device. |
| Advantage: The device migrates ions between the ECG layer and the channel layer by applying voltage between the ECG layer and the channel layer so as to improve conductivity of the channel layer based on concentration of ions in the channel. |
| Novelty: The device (100) has a drain electrode (106) in physical contact with a channel layer (102). A source electrode (104) is in physical contact with the channel layer and physically separated from the drain electrode by the channel layer. An electrolyte layer (108) is positioned on a top part of the channel layer. An electrochemical gate (ECG) layer (110) is positioned on a top part of the electrolyte layer, where the electrolyte layer physically separates the ECG layer and the channel layer, ions migrate from the ECG layer to the channel layer or from the channel layer to the ECG layer in responsive to voltage pulse being applied between the ECG layer and the channel layer and a conductance of the channel layer changes. |
| Filed: 2/9/2017 |
| Application Number: US15428325A |
| Tech ID: SD 13995.0 |
| This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention. |
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