Ionic floating-gate memory device
| DWPI Title: Non-volatile memory device i.e. ionic floating gate memory device, for use in e.g. computing devices, has transistor comprising channel having storage element emitting and accepting ions as function of current that enters gate electrode |
| Abstract: A non-volatile memory device is described herein. The non-volatile memory device includes a diffusive memristor electrically coupled to a redox transistor. The redox transistor includes a gate, a source, and a drain, wherein the gate comprises a first storage element that acts as an ion reservoir, and a channel between the source and the drain comprises a second storage element, wherein a state of the memory device is represented by conductance of the second storage element. |
| Use: Non-volatile memory device i.e. ionic floating gate (IFG) memory device, for use in computing devices. Uses include but are not limited to mobile telephones, laptop computing devices, desktop computing devices, server computing devices in data centers, tablet computing devices and enterprise server computing devices. |
| Advantage: The device achieves high impedance required for scaling to arrays larger than 100 elements and simultaneously achieves accuracy necessary for computation crossbar arrays larger than 1000 to balance out costs of circuit overheads. The device allows a diffusive memristor to be optimized to execute fast switching at low voltage while retaining a large ON/OFF ratio. |
| Novelty: The device (100) has a redox transistor (106) electrically coupled to a threshold switch (104) e.g. diffusive memristor, transistor, vertical silicon transistor, silicon PN diode, silicon Punchthrough diode, oxide PN diode, oxide/nitride Schottky barrier, varistor-type bidirectional switch, chalcogenide threshold switch, metal insulator metal switch, threshold vacuum switch or mixed ionic electronic selector (MIEC). The redox transistor comprises a gate electrode that is coupled to the switch, a source electrode, a drain electrode and a channel (118) between the source electrode and the drain electrode. The channel comprises a storage element made of material. The storage element emits and accepts hydrogen ions as a function of current that enters the gate electrode, where a state of the device is a function of a redox state of a channel electrode. |
| Filed: 6/19/2018 |
| Application Number: US16012430A |
| Tech ID: SD 14581.0 |
| This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention. |
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