Method of fabricating photosensitive devices with reduced process-temperature budget
| DWPI Title: Fabrication of optoelectronic device involves e.g. forming low pressure chemical vapor deposition layer comprising sublayer(s), forming dielectric bonding layer, and bonding dielectric bonding layer(s) |
| Abstract: A method is provided for fabricating a backside-illuminated photodetector in which a device wafer is joined to a readout wafer in an IC hybridization step. Before the IC hybridization step, the device layer is defined in the device wafer, and an LPCVD layer is formed over the device layer. The LPCVD layer may be a passivation layer, an antireflection coating, or both. The side of the device wafer having the LPCVD layer is bonded to a handle wafer, the IC is hybridized by mating the device wafer to the readout wafer, and the handle wafer is then removed, exposing the LPCVD layer. Because the LPCVD layer is formed before the active devices are fabricated, it can be made by high-temperature techniques for deposition and processing. Accordingly, a layer of high quality can be fabricated without any hazard to the active devices. |
| Use: Fabrication of optoelectronic device. |
| Advantage: The method enables fabrication of optoelectronic device with high quality. |
| Novelty: Fabrication of optoelectronic device involves forming an low pressure chemical vapor deposition (LPCVD) layer on a silicon device wafer by low-pressure chemical vapor deposition, forming a dielectric bonding layer (L1) on the LPCVD layer, providing a handle wafer containing a dielectric bonding layer (L2), bonding the dielectric bonding layer (L1) to the dielectric bonding layer (L2) so as to bond the device wafer to the handle wafer, forming at least one photosensitive active device on a silicon device layer in a face of the silicon device wafer opposite to the LPCVD layer, and removing the dielectric bonding layers (L1) and (L2) so that the silicon device layer is separated from the handle wafer and so that the LPCVD layer is exposed. The LPCVD layer comprises one or more sublayers comprising high-temperature silicon oxide, silicon oxynitride, or silicon nitride. |
| Filed: 5/2/2019 |
| Application Number: US16401821A |
| Tech ID: SD 13943.1 |
| This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention. |
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