Electronic circuit for control or coupling of single charges or spins and methods therefor
| DWPI Title: Semiconductor device for use in quantum computer, has quantum dot accumulation gate for defining quantum dot well in substrate, where gap between accumulation gates provides tunnel barrier between reservoir and quantum dot well |
| Use: Semiconductor device for use in a quantum computer. |
| Advantage: The device controls rate of transfer of electrons between an electron reservoir and a quantum dot in the device presenting a split gate geometry to attach a reservoir to each dot in a ID quantum dot array. |
| Novelty: The device has a reservoir accumulation gate (511) defining an electric charge reservoir in a semiconductor substrate. A quantum dot accumulation gate (501) defines a quantum dot well in the substrate, where a gap between the accumulation gates provides a tunnel barrier between the reservoir and the quantum dot well, and a common polarity electrical potential applied to the reservoir gate and the quantum dot gate defines a tunnel barrier height, width and charge tunneling rate between the quantum dot well and the reservoir without relying on barrier gate to control the charge tunneling rate. |
| Filed: 10/16/2018 |
| Application Number: US16094176A |
| Tech ID: SD 13632.2 |
| This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention. |
| Data from Derwent World Patents Index, provided by Clarivate All rights reserved. Republication or redistribution of Clarivate content, including by framing or similar means, is prohibited without the prior written consent of Clarivate. Clarivate and its logo, as well as all other trademarks used herein are trademarks of their respective owners and used under license. |