Two-terminal electronic charge resistance switching device
| DWPI Title: Two-terminal memory device used in information storage and information retrieval comprises bottom electrode electrically continuous with first operating terminal of the device and control gate electrode electrically continuous with second operating terminal of the device |
| Abstract: A two-terminal memory device and methods for its use are provided. In the device, a bottom electrode is electrically continuous with a first operating terminal, and a control gate electrode is electrically continuous with a second operating terminal. A stack of insulator layers comprising a hopping conduction layer and a tunnel layer is contactingly interposed between the bottom electrode and the control gate electrode. The tunnel layer is thinner than the hopping conduction layer, and it has a wider bandgap than the hopping conduction layer. The hopping conduction layer consists of a material that supports electron hopping transport. |
| Use: The device is useful in information storage and information retrieval (all claimed). |
| Advantage: The device: is simply that the top oxide will reduce the hopping current that escapes during the read operation, and it will reduce the leakage current during unbiased state retention; and exhibits improved performance parameters e.g. switching speed, endurance, retention time and switching voltages and currents. |
| Novelty: Two-terminal memory device comprises a bottom electrode electrically continuous with a first operating terminal of the device and a control gate (18) electrode electrically continuous with a second operating terminal of the device, and further comprising a stack of insulator layers contactingly interposed between the bottom electrode and the control gate electrode, where the stack of insulator layers comprises a hopping conduction layer and a tunnel layer, the tunnel layer is thinner than the hopping conduction layer and has a wider bandgap than the hopping conduction layer and the hopping conduction layer consists of a material that supports electron hopping transport. The tunnel layer comprises silicon dioxide and the hopping conduction layer comprises silicon nitride. |
| Filed: 2/24/2020 |
| Application Number: US16798723A |
| Tech ID: SD 14536.1 |
| This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention. |
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