Regrowth method for fabricating wide-bandgap transistors, and devices made thereby

DWPI Title: Method for fabricating high electron mobility transistor (HEMT), involves epitaxially regrowing further III-nitride material in opened access region windows to interface with underlying III-nitride material in access regions
Abstract: Methods are provided for fabricating a HEMT (high-electron-mobility transistor) that involve sequential epitaxial growth of III-nitride channel and barrier layers, followed by epitaxial regrowth of further III-nitride material through a window in a mask layer. The regrowth takes place on the barrier layer, only in the access region or regions. Devices made according to the disclosed methods are also provided.
Use: Method for fabricating HEMT (claimed) such as ultra-wide bandgap (UWBG) enhancement-mode HEMT.
Advantage: Reduces the access-region resistivity in HEMT by using a technique for regrowing semiconductor material over the barrier layer in the access regions, improving the performance of UWBG enhancement-mode HEMT in III-nitride material systems.
Novelty: The method involves epitaxially growing a III-nitride channel layer (204) on a substrate (200) and a III-nitride barrier layer (206) on the channel layer. A dielectric mask layer is deposited on the barrier layer. Windows are opened through the dielectric mask layer only in the access regions. Further III-nitride material is epitaxially regrown in the opened access region windows such that the regrown material (616) interfaces with underlying III-nitride material only in the access regions.
Filed: 4/16/2019
Application Number: US16385193A
Tech ID: SD 14049.2
This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention.
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