Microfabricated ion trap chip with an integrated microwave antenna
| DWPI Title: Apparatus for quantum information processing has microwave antenna integrated on ion trap chip and with parallel radiator traces formed in top metallization layer and connected in series so that the direction of current flow is same in each radiator trace |
| Abstract: An ion trap chip, which may be used for quantum information processing and the like, includes an integrated microwave antenna. The antenna is formed as a radiator connected by one of its ends to the center trace of a microwave transmission line and connected by its other end to a current return path through a ground trace of the microwave transmission line. The radiator includes several parallel, coplanar radiator traces connected in series. The radiator traces are connected such that they all carry electric current in the same direction, so that collectively, they simulate a single, unidirectionally flowing sheet of current. In embodiments, induced currents in underlying metallization planes are suppressed by parallel slots that extend in a direction perpendicular to the radiator traces. |
| Use: Apparatus for quantum information processing. |
| Advantage: Reduces parasitic capacitance between the antenna and the ground plane since antenna is suspended by air bridges over the slots in underlying ground plane. Avoiding ground connections in the region beneath the top-level antenna traces helps to suppress undesired induced currents. |
| Novelty: The apparatus has an ion trap chip with a substrate, a top metallization layer formed over the substrate, and at least one further metallization layer formed between the substrate and the top metallization layer, and a microwave antenna integrated on the ion trap chip. The microwave antenna has parallel radiator traces formed in the top metallization layer. The radiator traces are connected in series so that the direction of current flow is the same in each radiator trace. |
| Filed: 8/18/2020 |
| Application Number: US16995987A |
| Tech ID: SD 14898.1 |
| This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention. |
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