Microfabricated ion trap chip with in situ radio-frequency sensing

DWPI Title: Apparatus for sensing microfabricate ion trap chip with in situ radio-frequency, has sensor plate that is coupled through first and second capacitances to RF electrode and to ground plane electrode
Abstract: A radio-frequency (RF) surface ion trap chip includes an RF electrode and an integrated capacitive voltage divider in which an intermediate voltage node is capacitively connected between the RF electrode and a ground. A sensor output trace is connected to the intermediate voltage node.
Use: Apparatus for sensing microfabricate ion trap chip with in situ radio-frequency.
Advantage: The efforts are underway to better understand the sources of ionic heating and to decrease the power requirements so that power dissipation in the trapping structure is reduced.
Novelty: The apparatus has an ion trap chip further comprises a capacitive voltage divider integrated on the ion trap chip. The capacitive voltage divider includes a sensor plate. The sensor plate is sandwiched between and parallel to the portion of the RF electrode (701) and of a ground plane electrode are situated at a lower metallization level than the RF electrode and sensor plate (706). The chip that is capacitively connected between the RF electrode and ground plane electrode are situated on a first lower than the top metallization levels. The ion trap chip further comprises a sensor output trace is connected to the sensor plate and adapted for conveying an RF voltage signal from the sensor plate to a connection to off-chip sensing circuitry. The sensor plate is coupled through a first capacitance to the RF electrode and through a second capacitance to the ground plane electrode. The first capacitance is less than the second capacitance.
Filed: 3/17/2020
Application Number: US16821150A
Tech ID: SD 14894.1
This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention.
Data from Derwent World Patents Index, provided by Clarivate
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