Gallium nitride electromagnetic pulse arrestor
| DWPI Title: Electromagnetic pulse arrestor comprises high-doped n-type gallium nitride substrate or contact layer, low-doped n-type gallium nitride drift layer epitaxially grown on gallium nitride substrate |
| Abstract: A GaN diode EMP arrestor exhibits breakdown in <10 ns at reverse-bias voltage >20 kV. Additionally, the arrestor exhibits avalanche ruggedness at 1 kA/cm2 in a 1 mm2 device (i.e. 10 A absolute current) over a period of 500 ns following the onset of breakdown. Finally, the specific on-resistance in the forward direction is <20 mΩ cm2. |
| Use: Electromagnetic pulse arrestor. |
| Advantage: The electromagnetic pulse arrestor is directed to a high-voltage gallium nitride (GaN) PN diode pulse arrestor that could protect the nation's electric grid against EMP threats. The electromagnetic pulse arrestor can have a response time of less than 10 nanoseconds (ns) and an avalanche breakdown voltage of greater than 20 kilovolt (kV) in reverse bias. Additionally, the high-voltage GaN diode can provide a fundamental building block for the creation of more complex high-voltage vertical GaN devices, such as MOSFETs, which can have wide-ranging impact on the grid and other applications. |
| Novelty: Electromagnetic pulse arrestor comprises a high-doped n-type gallium nitride substrate or contact layer, a low-doped n-type gallium nitride drift layer epitaxially grown on the gallium nitride substrate. The thickness of the low-doped n-type gallium nitride drift layer is greater than 100 micron (μm). The low-doped n-type gallium nitride drift layer is grown by metal-organic chemical vapor deposition, a high-doped p-type gallium nitride layer epitaxially grown on the drift layer, thus forming a p-n junction with the drift layer, an edge termination structure laterally surrounding the p-n junction on the drift layer, an ohmic cathode contact to the high-doped n-type gallium nitride substrate or contact layer, and an ohmic anode contact to the high-doped p-type gallium nitride layer. |
| Filed: 10/1/2019 |
| Application Number: US16589428A |
| Tech ID: SD 14700.1 |
| This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention. |
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