Radiation detector using a graphene amplifier layer
| DWPI Title: Imaging system for detecting or imaging radiation field using junction devices, comprises control bus and readout bus that are connected between junction devices and controller |
| Abstract: A radiation field is detected or imaged using one or more junction devices in which a two-dimensional conductor layer is capacitively coupled to a semiconductor absorber layer. In the junction devices, pixel-level amplification and read-out are accomplished through the photogating of the devices by absorption within the absorber layer while it is in a state of deep depletion. When the two-dimensional conductor is graphene, we refer to a device operating in that manner as a deeply depleted graphene-oxide-semiconductor (D2GOS) detector. |
| Use: Imaging system for detecting or imaging radiation field using junction devices i.e. deeply depleted graphene-oxide-semiconductor (D2 GOS) detector. |
| Advantage: The detector can be operated with high sensitivity in a manner analogous to a charge coupled device (CCD), but with localized readout from the graphene. The detector has high carrier mobility and broadband photoconductive spectral response. |
| Novelty: Imaging system comprises junction devices arranged in an array, a controller, and a control bus and a readout bus connected between the junction devices and the controller. Each junction device comprises a semiconductor absorber body, a dielectric film of insulating oxide, and a channel layer comprising graphene that overlies the film. The graphene/oxide/semiconductor (GOS) junction is formed in the interface region of each junction device. The junction device further comprises a metallic source electrode (17) and a metallic drain electrode (18) contacting opposing ends of the channel layer. The absorber (10) is backed by back-gate electrode (12) and is overlain by oxide layer (14). The graphene channel (16) is seen overlying the oxide layer. |
| Filed: 10/17/2018 |
| Application Number: US16162756A |
| Tech ID: SD 14080.1 |
| This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention. |
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