Photolithography of atomic layer resist
| DWPI Title: Using optical beam to pattern passivated silicon surface for doping resulting selectively depassivated surface involves decomposing precursor gas to release dopant and incorporating dopant into substrate surface, where selective depassivating comprises exciting substrate surface with optical beam |
| Abstract: In a method of atomic precision advanced manufacturing (APAM), an atomic or molecular resist layer on a substrate surface is selectively depassivated by locally exciting the substrate surface with an optical beam effective to eject adsorbed atoms or molecules from the substrate surface. The substrate surface is further processed by exposing it to a precursor gas, decomposing the precursor gas to release a dopant, and incorporating the dopant into the substrate surface. |
| Use: Method for using optical beam to pattern passivated silicon surface and for doping resulting selectively depassivated surface, atomic scale manufacturing techniques for applications in the fabrication of semiconductor devices. |
| Advantage: The method provides capabilities for fabricating plasmonic devices and microelectronics with enhanced doping, and reducing processing time, and provides a viable route for rapid and parallel processing over large areas. |
| Novelty: Method for using optical beam to pattern passivated silicon surface and for doping resulting selectively depassivated surface involves passivating a substrate surface with an atomic or molecular resist species; selectively depassivating the substrate surface; exposing the substrate surface to a precursor gas; and decomposing the precursor gas to release a dopant and incorporating the dopant into the substrate surface, where the selective depassivating comprises locally exciting the substrate surface with an optical beam effective to eject adsorbed resist atoms or molecules from the substrate surface using photothermal heating. |
| Filed: 2/23/2021 |
| Application Number: US17182838A |
| Tech ID: SD 15252.1 |
| This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention. |
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