Thermally sensitive ionic redox transistor
| DWPI Title: Device for performing operation of ionic redox transistor of analog memory device, has electrolyte layer positioned between channel layer and reservoir layer, where conductance of channel layer is changed in response to ions or vacancies |
| Abstract: A thermally sensitive ionic redox transistor comprises a solid channel, a solid reservoir layer, and a solid electrolyte layer disposed between the channel and the reservoir layer. A conductance of the channel is varied by changing the concentration of ions such as oxygen vacancies in the channel layer. Ionic conductivity of the gate, electrolyte, and channel layers increase with increasing temperature. Ion or vacancy transport between the channel and the reservoir layer across the electrolyte layer occurs in response to applying a voltage between the channel and the reservoir layer when the device is heated to an elevated temperature. When the device is cooled below the elevated temperature, the ions are trapped in one or more of the layers because the materials lose their ionic conductivity. A state of the redox transistor can be read by measuring the conductance of the channel. |
| Use: Device for performing an operation of a thermally sensitive ionic redox transistor of an analog memory device (claimed). |
| Advantage: The device prevents change of electronic conductance of the channel layer between a source contact and a drain contact when the reservoir layer and the channel layer are electrically shorted. The device reduces temperature of a redox transistor to the temperature below room temperature, thus improving retention of a channel conductance state. |
| Novelty: The device has an electrolyte layer (106) positioned between a channel layer (102) and a reservoir layer (104). The electrolyte layer comprises yttria-stabilized zirconia (YSZ), where ions or oxygen vacancies are migrated between the reservoir layer and the channel layer by the electrolyte layer in response to voltage being applied between the reservoir layer and the channel layer when the device is heated, and the conductance of the channel layer is changed in response to the migrated ions or oxygen vacancies between the reservoir layer and the channel layer. The channel layer and the reservoir layer comprise titanium oxide. |
| Filed: 4/21/2020 |
| Application Number: US16854151A |
| Tech ID: SD 15312.0 |
| This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention. |
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