Method of chemical doping that uses CMOS-compatible processes
| DWPI Title: Doping substrate from dopant precursor gas involves covering surface of substrate with hard mask, selectively removing material from hard mask such that selected areas of substrate surface are laid bare, and exposing laid-bare areas to the dopant precursor gas |
| Abstract: A method of Atomic Precision Advanced Manufacturing (APAM) is provided, in which a substrate is doped from a dopant precursor gas. The method involves covering a surface of the substrate with a hard mask, selectively removing material from the hard mask such that selected areas of the substrate surface are laid bare, exposing the laid-bare areas to the dopant precursor gas, and heating the substrate so as to incorporate dopant from the dopant precursor gas into the substrate surface. |
| Use: Method for doping a substrate from a dopant precursor gas. |
| Advantage: The method is highly scalable and can leverage standard CMOS process to enable patterning of an APAM device. |
| Novelty: Doping a substrate from a dopant precursor gas involves covering a surface of the substrate with a hard mask; selectively removing material from the hard mask such that selected areas of the substrate surface are laid bare; exposing the laid-bare areas to the dopant precursor gas; heating the substrate to incorporate dopant from the dopant precursor gas into the substrate surface; forming a locking layer over the substrate surface by deposition followed by recrystallization; and epitaxially growing a cap layer of silicon over the substrate. |
| Filed: 6/28/2021 |
| Application Number: US17360284A |
| Tech ID: SD 15214.1 |
| This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention. |
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