Edge majorana quasiparticles and qubits
| DWPI Title: Method for fabricating quantum computer, involves placing carbon nanotube along side of multilayer structure in direction that extends between bottom and top of multilayer structure, and placing carbon nanotube across portion of substrate |
| Abstract: Various embodiments described herein provide for a topological quantum computer that uses edge Majorana quasi-particles to form qubits. An inverted Indium Arsenide (InAs) and Gallium Antimonide (GaSb) heterostructure is disclosed that is a quantum spin Hall insulator. A layer of aluminum can be deposited over a nanotube that is placed across the layers of the heterostructure. Once the nanotube is removed, and a gate is formed on the heterostructure and the heterostructure is cooled so that the aluminum becomes superconducting, helical edge states are formed at the junction of the super conducting aluminum, the InAs, and the GaSb which creates a Majorana zero modes (MZMs) at zero magnetic field. The MZMs can be used to construct a topological qubit for fault-resistant topological quantum computation. |
| Use: Method for fabricating a topological quantum computer (claimed) e.g. quantum spin Hall insulator. Can also be used in smartphones and laptops. |
| Advantage: The method enables constructing a topological qubit for fault-resistant topological quantum computation, and transfering quantum information through collective quantized motion of ions in a shared trap. |
| Novelty: The method involves placing a carbon nanotube along a side of a multilayer structure in direction that extends between a bottom and a top of the multilayer structure. The carbon nanotube is placed across a portion of a substrate, a first layer of aluminum antimonide, a layer of indium arsenide, a layer of gallium antimonide, and a second layer of the aluminum antimonide. A layer of aluminum is deposited on a side of the multilayer structure. The carbon nanotube is removed, such that a gap is formed in the layer of aluminum along the side of the multilayer structure. A dielectric layer and metal layer are deposited on a top side of the second layer of the aluminum antimonide. |
| Filed: 12/13/2021 |
| Application Number: US17548890A |
| Tech ID: SD 15791.0 |
| This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention. |
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