Multichannel transistor with improved gate conformation

DWPI Title: Transistor e.g. high electron mobility transistor (HEMT) has gate fingers that extend across active area with meandering shape, and have propagation delay from common signal injection point within gate manifold to end of finger distal manifold
Abstract: A multichannel transistor is provided. In the transistor, a plurality of gate fingers overlie a substrate and extend laterally across the substrate from a gate manifold. The gate manifold has a curved edge, and each of the gate fingers projects radially from the curved manifold edge.
Use: High electron mobility transistor (HEMT) for use in high power applications. Can also be used in radio frequency (RF) devices. Uses include but are not limited to high voltage and high power electronics.
Advantage: The meandering shapes are able to equalize the phase delays of the various gate fingers by equalizing their effective lengths. The high-voltage and high-power transistors that can reduce channel temperatures are provided.
Novelty: The transistor has a substrate with an active area, and a gate manifold formed on the substrate. Three or more gate fingers extend across the active area from the gate manifold. The gate manifold has a curved edge, and each of the gate fingers projects radially from the curved manifold edge. One of the three gate fingers has a meandering shape that comprises an arc. The meandering shapes of two gate fingers comprise a set of arcs described about a curved central course. The sinusoidal arcs of one gate finger are modulated in both frequency and amplitude.
Filed: 3/10/2022
Application Number: US17691970A
Tech ID: SD 14284.1
This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention.
Data from Derwent World Patents Index, provided by Clarivate
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