Programming analog memory elements in a neomorphic computing system
| DWPI Title: Method for tuning electrical property of analog memory elements in neomorphic computing system, involves applying light or heat to analog memory element to cause electrical property to change from first value to second value |
| Abstract: A method is disclosed herein which includes obtaining an array of analog memory elements. It also includes programming an analog memory element included in the array, where prior to being programmed the analog memory element has a first value for an electrical property, and where it is programmed to cause the analog memory element to perform a computation included in a series of computations performed by the array. Programming the analog memory element includes applying light or heat to the analog memory element, where a value of the electrical property is changed from the first value to a second value based upon application of light or heat to the analog memory element, and further where upon the value of the electrical property being changed from the first value to the second value, the analog memory element is configured to perform the computation responsive to receipt of an input. |
| Use: Method for tuning an electrical property of analog memory elements (claimed) in a neomorphic computing system of an autonomous vehicle (AV). Uses include but are not limited to a lidar system, a camera system, and a radar system. |
| Advantage: The method enables tuning resistance of the analog memory elements to provide analog stable states, thus providing an ability to memorize neural network weights into phase configurations of the elements. The tuning is reversible. The tuning can be reversed by placing the analog memory array into an oxidative environment, which results in electrical structures of analog memory elements in the array to their original forms after a dense array of analog memory elements is tuned to perform a computational task. |
| Novelty: The method (300) involves obtaining (304) an array of analog memory elements. An analog memory element that is included in the array of memory elements is programmed by applying (306) one of light or heat to the memory element, where one of the light or the heat is directed at the element by a laser during programming of the analog memory element. The light is applied, and the light has a wavelength of between 500 nanometers (nm) and 600 nm. A value of the electrical property is changed from the first value to a second value based upon application of the light or the heat to the analog memory element. The analog memory element is configured to perform the computation responsive to receipt of an input upon the value of the electrical property being changed from the first value to the second value. |
| Filed: 8/23/2021 |
| Application Number: US17408806A |
| Tech ID: SD 15565.0 |
| This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention. |
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