Electrochemical random access memory device with contact layer as a heat source
| DWPI Title: System for creating electrochemical RAM device, has first voltage source in electrical contact with contact layer, and second voltage source in electrical contact with contact layer and contact that is coupled to channel layer |
| Abstract: Technologies related to an electrochemical random access memory (ECRAM) device are described herein. The ECRAM device includes a channel layer, an electrolyte layer, a reservoir layer, and a conductive contact layer, where the conductive contact layer is in contact with the reservoir layer. A voltage source is coupled to the contact layer and is configured to cause current to flow laterally across the contact layer from one side to another, resulting in the contact layer emitting heat by way of Joule heating. When the ECRAM device is heated to a sufficiently high temperature, a second voltage is applied across the stack of layers, thereby causing ion transport between the reservoir layer and the channel layer. |
| Use: System for creating an ECRAM device. |
| Advantage: The ECRAM device has higher areal density, and does not require separate heating circuitry for each device. |
| Novelty: The system has a thermally-sensitive electrochemical RAM (ECRAM) device (100) comprising an ionic reservoir layer (104) that comprises an oxygen vacancy. A channel layer (102) is in contact with an electrolyte layer (106). A contact layer (108) is provided in contact the ionic layer. A first voltage source (124) applies a first voltage across the contact layer such that current travels laterally across contact layer and contact layer emits heat by way of Joule heating. The heat emitted by contact layer facilitates transition of oxygen vacancy from reservoir layer to channel layer when second voltage is applied across ionic, electrolyte and channel layers. |
| Filed: 11/29/2023 |
| Application Number: US18522640A |
| Tech ID: SD 16393.0 |
| This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention. |
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