| Abstract: | A method is disclosed for singulating die from a substrate having a
sacrificial layer and one or more device layers, with a retainer being
formed in the device layer(s) and anchored to the substrate. Deep
Reactive Ion Etching (DRIE) etching of a trench through the substrate
from the bottom side defines a shape for each die. A handle wafer is then
attached to the bottom side of the substrate, and the sacrificial layer
is etched to singulate the die and to form a frame from the retainer and
the substrate. The frame and handle wafer, which retain the singulated
die in place, can be attached together with a clamp or a clip and to form
a package for the singulated die. One or more stops can be formed from
the device layer(s) to limit a sliding motion of the singulated die. |