| Abstract: A method is disclosed for singulating die from a substrate having a
sacrificial layer and one or more device layers, with a retainer being
formed in the device layer(s) and anchored to the substrate. Deep
Reactive Ion Etching (DRIE) etching of a trench through the substrate
from the bottom side defines a shape for each die. A handle wafer is then
attached to the bottom side of the substrate, and the sacrificial layer
is etched to singulate the die and to form a frame from the retainer and
the substrate. The frame and handle wafer, which retain the singulated
die in place, can be attached together with a clamp or a clip and to form
a package for the singulated die. One or more stops can be formed from
the device layer(s) to limit a sliding motion of the singulated die. |
| Filed: 4/13/2010 |
| Application Number: 12/758833 |
| This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention. |
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