| Abstract: An optical NOR gate is formed from two pair of optical waveguide devices
on a substrate, with each pair of the optical waveguide devices
consisting of an electroabsorption modulator electrically connected in
series with a waveguide photodetector. The optical NOR gate utilizes two
digital optical inputs and a continuous light input to provide a NOR
function digital optical output. The optical NOR gate can be formed from
III-V compound semiconductor layers which are epitaxially deposited on a
III-V compound semiconductor substrate, and operates at a wavelength in
the range of 0.8-2.0 .mu.m. |
| Filed: 11/13/2008 |
| Application Number: 12/270221 |
| This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention. |
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