| Abstract: A method for programming substantially simultaneously more than one of
the three-terminal memory cells that represent the values of a matrix to
be multiplied by a vector is disclosed. Programming may be achieved by
controlling the gate-drain voltage for more than one cell simultaneously
to change each such cell's physical state and hence its effective
resistance. Illustratively, the gates of each row of the cells
corresponding to the matrix are coupled together and each coupled row is
coupled to a respective controllable voltage source while the drains of
each column of the cells of the matrix are coupled together and each
coupled column is coupled to a respective controllable voltage source.
The controllable voltage sources are arranged so that at the intersection
of a row and a column, a cell experiences one of three conditions:
increase effective resistance, decrease effective resistance, or
substantially no change. |
| Filed: 9/21/2018 |
| Application Number: 16/137758 |
| This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention. |
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