| Abstract: An avalanche diode includes an absorption region in a germanium body
epitaxially grown on a silicon body including a multiplication region.
Aspect-ratio trapping is used to suppress dislocation growth in the
vicinity of the absorption region. |
| Filed: 9/30/2015 |
| Application Number: 14/870195 |
| This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention. |
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