| Abstract: Quasi-phase matched (QPM), semiconductor photonic waveguides include
periodically-poled alternating first and second sections. The first
sections exhibit a high degree of optical coupling (abbreviated
"X.sup.2"), while the second sections have a low X.sup.2. The alternating
first and second sections may comprise high-strain and low-strain
sections made of different material states (such as crystalline and
amorphous material states) that exhibit high and low X.sup.2 properties
when formed on a particular substrate, and/or strained corrugated
sections of different widths. The QPM semiconductor waveguides may be
implemented as silicon-on-insulator (SOI), or germanium-on-silicon
structures compatible with standard CMOS processes, or as
silicon-on-sapphire (SOS) structures. |
| Filed: 8/28/2013 |
| Application Number: 14/12877 |
| This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention. |
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