|Abstract: ||Various technologies pertaining to a transistor having a
variable-conductance channel with a non-volatile tunable conductance are
described herein. The transistor comprises source and drain electrodes
separated by a conducting channel layer. The conducting channel layer is
separated from an electrochemical gate (ECG) layer by an electrolyte
layer that prevents migration of electrons between the channel and the
ECG but allows ion migration. When a voltage is applied between the
channel and the ECG, electrons flow from one to the other, which causes a
migration of ions from the channel to the ECG or vice versa. As ions move
into or out of the channel layer, the conductance of the channel changes.
When the voltage is removed, the channel maintains its conductance state.