Systems and methods for dynamically reconfigurable artificial synapses and neurons with tunable activation functions
| DWPI Title: Device for neuromorphic computing, comprises first and second ionic redox transistors, each comprising channel layer, first contact, and second contact, where first transistor is configured to operate as synapse in neural network |
| Abstract: An ionic redox transistor comprises a solid channel, a solid reservoir layer, and a solid electrolyte layer disposed between the channel and the reservoir layer. The channel exhibits a substantially linear current-voltage relationship in a first range of voltages, and a nonlinear current-voltage relationship in a second range of voltages that is greater than the first range of voltages. One or both of the substantially linear current-voltage relationship or the nonlinear current-voltage relationship of the channel is varied by changing the concentration of ions such as oxygen vacancies in the channel. Ion or vacancy transport between the channel and the reservoir layer across the electrolyte layer occurs in response to applying a voltage between the channel and the reservoir layer. Subject to the first range of voltages, the channel can function as a synapse device. Subject to the second range of voltages, the channel can function as a neuron device. |
| Use: Neuromorphic computing device e.g. resistive random access memory (RRAM) and phase change memory (PCM) for use in neuromorphic computer. |
| Advantage: The ionic redox transistor is thermally sensitive, such that ions present in one or more of the channel layer, the electrolyte layer, or the reservoir layer are mobile at an elevated temperature and immobile at a low temperature. It can function as either a synapse device or a neuron device. |
| Novelty: The device comprises first and second ionic redox transistors provided with a channel layer. The first contact is positioned at a first end of the channel layer. The second contact is positioned at a second end of the channel layer, where the first ionic redox transistor is operated as a synapse in a neural network based on first voltage in a first range of voltages applied between the first contact and the second contact and the second ionic redox transistor is operated as an activation function in the neural network based on second voltage in a second range of voltages applied between the first and second contacts. The channel layer exhibits a nonlinear current-voltage relationship in response to the second voltage applied between the first and second contacts. |
| Filed: 11/9/2021 |
| Application Number: US17522006A |
| Tech ID: SD 15718.0 |
| This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention. |
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