Silicon nanowire device and method for its manufacture

Patent Number: 9,536,947
Issued: 1/3/2017
Official Filing: View the Complete Patent
Abstract: There is provided an electronic device and a method for its manufacture. The device comprises an elongate silicon nanowire less than 0.5 .mu.m in cross-sectional dimensions and having a hexagonal cross-sectional shape due to annealing-induced energy relaxation.
Filed: 8/14/2013
Application Number: 13/966,553
Government Interests: STATEMENT OF GOVERNMENT INTEREST This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention.