Regrowth method for fabricating wide-bandgap transistors, and devices made thereby

Patent Number: 10,553,697
Issued: 2/4/2020
Official Filing: View the Complete Patent
Abstract: Methods are provided for fabricating a HEMT (high-electron-mobility transistor) that involve sequential epitaxial growth of III-nitride channel and barrier layers, followed by epitaxial regrowth of further III-nitride material through a window in a mask layer. The regrowth takes place on the barrier layer, only in the access region or regions. Devices made according to the disclosed methods are also provided.
Filed: 4/16/2019
Application Number: 16/385,193
Government Interests: STATEMENT OF GOVERNMENT INTEREST This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention.