Radiation detector using a graphene amplifier layer

Patent Number: 11,287,536
Issued: 3/29/2022
Official Filing: View the Complete Patent
Abstract: A radiation field is detected or imaged using one or more junction devices in which a two-dimensional conductor layer is capacitively coupled to a semiconductor absorber layer. In the junction devices, pixel-level amplification and read-out are accomplished through the photogating of the devices by absorption within the absorber layer while it is in a state of deep depletion. When the two-dimensional conductor is graphene, we refer to a device operating in that manner as a deeply depleted graphene-oxide-semiconductor (D.sup.2GOS) detector.
Filed: 10/17/2018
Application Number: 16/162,756
Government Interests: STATEMENT OF GOVERNMENT INTEREST This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention.