|Abstract: ||A radiation field is detected or imaged using one or more junction
devices in which a two-dimensional conductor layer is capacitively
coupled to a semiconductor absorber layer. In the junction devices,
pixel-level amplification and read-out are accomplished through the
photogating of the devices by absorption within the absorber layer while
it is in a state of deep depletion. When the two-dimensional conductor is
graphene, we refer to a device operating in that manner as a deeply
depleted graphene-oxide-semiconductor (D.sup.2GOS) detector.