| Abstract: A radiation field is detected or imaged using one or more junction
devices in which a two-dimensional conductor layer is capacitively
coupled to a semiconductor absorber layer. In the junction devices,
pixel-level amplification and read-out are accomplished through the
photogating of the devices by absorption within the absorber layer while
it is in a state of deep depletion. When the two-dimensional conductor is
graphene, we refer to a device operating in that manner as a deeply
depleted graphene-oxide-semiconductor (D.sup.2GOS) detector. |
| Filed: 10/17/2018 |
| Application Number: 16/162756 |
| This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention. |
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