|Abstract: ||Embodiments disclosed herein relate to photon detectors configured to
employ the Gunn effect for detecting high-energy photons (e.g., x-rays
and gamma rays) and methods of use. In an embodiment, a photon detector
for detecting high-energy photons is disclosed. The photon detector
includes a p-i-n semiconductor diode having a p-type semiconductor
region, an n-type semiconductor region, and a compensated i-region
disposed between the p-type semiconductor region and the n-type
semiconductor region. The compensated i-region and has a width of about
100 .mu.m to about 400 .mu.m and is configured to exhibit the Gunn effect
when the p-i-n semiconductor diode is forward biased a sufficient amount.
The compensated i-region is doped to include a free carrier concentration
of less than about 10.sup.10 cm.sup.-3.