| Abstract: Embodiments disclosed herein relate to photon detectors configured to
employ the Gunn effect for detecting high-energy photons (e.g., x-rays
and gamma rays) and methods of use. In an embodiment, a photon detector
for detecting high-energy photons is disclosed. The photon detector
includes a p-i-n semiconductor diode having a p-type semiconductor
region, an n-type semiconductor region, and a compensated i-region
disposed between the p-type semiconductor region and the n-type
semiconductor region. The compensated i-region and has a width of about
100 .mu.m to about 400 .mu.m and is configured to exhibit the Gunn effect
when the p-i-n semiconductor diode is forward biased a sufficient amount.
The compensated i-region is doped to include a free carrier concentration
of less than about 10.sup.10 cm.sup.-3. |
| Filed: 9/10/2013 |
| Application Number: 14/23348 |
| This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention. |
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