| Abstract: A photodetector is disclosed for the detection of near-infrared light
with a wavelength in the range of about 0.9-1.7 microns. The
photodetector, which can be formed as either an nBp device or a pBn
device on an InP substrate, includes an InGaAs light-absorbing layer, an
InAlGaAs graded layer, an InAlAs or InP barrier layer, and an InGaAs
contact layer. The photodetector can detect near-infrared light with or
without the use of an applied reverse-bias voltage and is useful as an
individual photodetector, or to form a focal plane array. |
| Filed: 6/30/2010 |
| Application Number: 12/827587 |
| This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention. |
| Attribution for Derwent World Patents Index Records published on Sandia ® Clarivate. All rights reserved. Republication or redistribution of Clarivate content, including by framing or similar means, is prohibited without the prior written consent of Clarivate. Clarivate and its logo, as well as all other trademarks used herein are trademarks of their respective owners and used under license. |