| Abstract: | A photodetector is disclosed for the detection of near-infrared light
with a wavelength in the range of about 0.9-1.7 microns. The
photodetector, which can be formed as either an nBp device or a pBn
device on an InP substrate, includes an InGaAs light-absorbing layer, an
InAlGaAs graded layer, an InAlAs or InP barrier layer, and an InGaAs
contact layer. The photodetector can detect near-infrared light with or
without the use of an applied reverse-bias voltage and is useful as an
individual photodetector, or to form a focal plane array. |