Mutually injection locked lasers for enhanced frequency response
| DWPI Title: Semiconductor light-emitting device of photonic integrated circuit, has intensity modulation section that is monolithically integrated between laser sections which are monolithically integrated on common substrate |
| Abstract: Semiconductor light-emitting devices; methods of forming semi-conductor light emitting devices, and methods of operating semi-conductor light emitting devices are provided. A semiconductor light-emitting device includes a first laser section monolithically integrated with a second laser section on a common substrate. Each laser section has a phase section, a gain section and at least one distributed Bragg reflector (DBR) structure. The first laser section and the second laser section are optically coupled to permit optical feedback therebetween. Each phase section is configured to independently tune a respective one of the first laser section and second laser section relative to each other. |
| Use: Semiconductor light-emitting device of photonic integrated circuit, used as components for many optoelectronic applications e.g. optical telecommunication, and in single sideband modulation and optical oscillators. |
| Advantage: The intensity modulation section can modulate the intensity of photons transferred between laser sections to produce a flatter frequency response across the bandwidth of device, and can increase the modulation efficiency of the device. Therefore the laser sections can operate in a mutual injection-locking regime, and can produce an increased resonance frequency and increased bandwidth as compared with conventional directly modulated lasers. Monolithic integration of components of the semiconductor light-emitting device on a single compact chip can reduce coupling losses, increase the mechanical robustness, produce a smaller form factor and include an improved compatibility of integration with other elements for the creation of highly functional photonic integrated circuits. Since there are no isolators involved in the device, the device consists of five coupled active laser cavities leading to closely spaced cavity mode spacing which can be responsible for the multiple response enhancements. |
| Novelty: The device (300) has two laser sections (302-1, 302-2) that are monolithically integrated on a common substrate with phase section, gain section and distributed Bragg reflector (DBR) structure. The phase section is configured to independently tune a respective laser section relative to the other. Two DBR structures (304-1, 304-2, 306-1, 306-2) are provided such that the phase section and the gain section are placed between the DBR structures. An intensity modulation section (308) is monolithically integrated between the laser sections. |
| Filed: 9/15/2011 |
| Application Number: US13233221A |
| Tech ID: SD 11762.0 |
| This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention. |
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