| Abstract: Semiconductor light-emitting devices; methods of forming semi-conductor
light emitting devices, and methods of operating semi-conductor light
emitting devices are provided. A semiconductor light-emitting device
includes a first laser section monolithically integrated with a second
laser section on a common substrate. Each laser section has a phase
section, a gain section and at least one distributed Bragg reflector
(DBR) structure. The first laser section and the second laser section are
optically coupled to permit optical feedback therebetween. Each phase
section is configured to independently tune a respective one of the first
laser section and second laser section relative to each other. |
| Filed: 9/15/2011 |
| Application Number: 13/233221 |
| This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention. |
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