Multilevel resistive information storage and retrieval

Patent Number: 9,412,446
Issued: 8/9/2016
Official Filing: View the Complete Patent
Abstract: The present invention relates to resistive random-access memory (RRAM or ReRAM) systems, as well as methods of employing multiple state variables to form degenerate states in such memory systems. The methods herein allow for precise write and read steps to form multiple state variables, and these steps can be performed electrically. Such an approach allows for multilevel, high density memory systems with enhanced information storage capacity and simplified information retrieval.
Filed: 8/18/2014
Application Number: 14/462,472
Related Opportunity: Full Stack Neuromorphic
Government Interests: STATEMENT OF GOVERNMENT INTEREST This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention.