| Abstract: Ion implantation or deposition can be used to modify the bulk electrical
properties of topological insulators. More particularly, ion implantation
or deposition can be used to compensate for the non-zero bulk
conductivity due to extrinsic charge carriers. The direct implantation of
deposition/annealing of dopants allows better control over carrier
concentrations for the purposes of achieving low bulk conductivity. Ion
implantation or deposition enables the fabrication of inhomogeneously
doped structures, enabling new types of device designs. |
| Filed: 6/8/2016 |
| Application Number: 15/177215 |
| This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention. |
| Attribution for Derwent World Patents Index Records published on Sandia ® Clarivate. All rights reserved. Republication or redistribution of Clarivate content, including by framing or similar means, is prohibited without the prior written consent of Clarivate. Clarivate and its logo, as well as all other trademarks used herein are trademarks of their respective owners and used under license. |