| Abstract: A method of optical modulation in a non-resonant epsilon-near-zero (EMZ)
plasmonic electro-optical modulator is provided. An optical carrier is
injected into a waveguide optically coupled to a layer of transparent
conductive material having an epsilon-near-zero (ENZ) wavelength. The
transparent conductive material layer constitutes a portion of a
capacitive structure that includes a gate dielectric layer. A
time-varying bias voltage applied across the gate dielectric layer shifts
the ENZ wavelength toward the carrier wavelength, and thereby impresses a
phase modulation pattern on the carrier wave. |
| Filed: 7/12/2019 |
| Application Number: 16/510012 |
| This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention. |
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