Methods of depositing an alpha-silicon-carbide-containing film at low temperature

Patent Number: 9,546,420
Issued: 1/17/2017
Official Filing: View the Complete Patent
Abstract: Described methods are useful for depositing a silicon carbide film including Alpha-SiC at low temperatures (e.g., below about C.), and resulting multi-layer structures and devices. A method includes introducing a chlorinated hydrocarbon gas and a chlorosilicon gas into a reaction chamber, and reacting the chlorinated hydrocarbon gas with the chlorosilicon gas at a temperature of less than about C. to grow the silicon carbide film. The silicon carbide film so-formed includes Alpha-SiC.
Filed: 8/5/2014
Application Number: 14/452,322
Government Interests: STATEMENT OF GOVERNMENT INTEREST This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention.