| Abstract: | Described methods are useful for depositing a silicon carbide film
including Alpha-SiC at low temperatures (e.g., below about 1400.degree.
C.), and resulting multi-layer structures and devices. A method includes
introducing a chlorinated hydrocarbon gas and a chlorosilicon gas into a
reaction chamber, and reacting the chlorinated hydrocarbon gas with the
chlorosilicon gas at a temperature of less than about 1400.degree. C. to
grow the silicon carbide film. The silicon carbide film so-formed
includes Alpha-SiC. |