Methods of depositing an alpha-silicon-carbide-containing film at low temperature

DWPI Title: Depositing silicon carbide film involves introducing chlorinated hydrocarbon gas and chlorosilicon gas into reaction chamber
Abstract: Described methods are useful for depositing a silicon carbide film including Alpha-SiC at low temperatures (e.g., below about 1400° C.), and resulting multi-layer structures and devices. A method includes introducing a chlorinated hydrocarbon gas and a chlorosilicon gas into a reaction chamber, and reacting the chlorinated hydrocarbon gas with the chlorosilicon gas at a temperature of less than about 1400° C. to grow the silicon carbide film. The silicon carbide film so-formed includes Alpha-SiC.
Use: Method for depositing silicon carbide film (claimed).
Advantage: The method provides deposition of silicon carbide film in a simple and cost-effective manner with improved film uniformity across the substrate by reducing undesirable gas-phase reactions.
Novelty: Silicon carbide film deposition involves introducing chlorinated hydrocarbon gas and chlorosilicon gas into a reaction chamber. The chlorinated hydrocarbon gas is reacted with chlorosilicon gas at 1400° C to grow silicon carbide film on a silicon-based substrate. The silicon carbide film as grown on the silicon-based substrate comprises alpha silicon carbide.
Filed: 8/5/2014
Application Number: US14452322A
Tech ID: SD 11963.1
This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention.
Data from Derwent World Patents Index, provided by Clarivate
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