Methods for resistive switching of memristors
| Patent Number: | 9,336,870 |
| Issued: | 5/10/2016 |
| Official Filing: | View the Complete Patent |
| Abstract: | The present invention is directed generally to resistive random-access memory (RRAM or ReRAM) devices and systems, as well as methods of employing a thermal resistive model to understand and determine switching of such devices. In particular example, the method includes generating a power-resistance measurement for the memristor device and applying an isothermal model to the power-resistance measurement in order to determine one or more parameters of the device (e.g., filament state). |
| Filed: | 2/3/2015 |
| Application Number: | 14/612,958 |
| Related Opportunity: |
Full Stack Neuromorphic |
| Government Interests: | STATEMENT OF GOVERNMENT INTEREST This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention. |