Methods for resistive switching of memristors

Patent Number: 9,336,870
Issued: 5/10/2016
Official Filing: View the Complete Patent
Abstract: The present invention is directed generally to resistive random-access memory (RRAM or ReRAM) devices and systems, as well as methods of employing a thermal resistive model to understand and determine switching of such devices. In particular example, the method includes generating a power-resistance measurement for the memristor device and applying an isothermal model to the power-resistance measurement in order to determine one or more parameters of the device (e.g., filament state).
Filed: 2/3/2015
Application Number: 14/612,958
Related Opportunity: Full Stack Neuromorphic
Government Interests: STATEMENT OF GOVERNMENT INTEREST This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention.