Method to grow group III-nitrides on copper using passivation layers

Patent Number: 8,741,748
Issued: 6/3/2014
Official Filing: View the Complete Patent
Abstract: Group III-nitride epilayers can be grown directly on copper substrates using intermediate passivation layers. For example, single crystalline c-plane GaN can be grown on Cu (110) substrates with MOCVD. The growth relies on a low temperature AlN passivation layer to isolate any alloying reaction between Ga and Cu.
Filed: 3/15/2013
Application Number: 13/836,594
Government Interests: STATEMENT OF GOVERNMENT INTEREST This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention.