| Abstract: A method reconstructs the charge collection from regions beneath opaque
metallization of a semiconductor device, as determined from focused laser
charge collection response images, and thereby derives a dose-rate
dependent correction factor for subsequent broad-area, dose-rate
equivalent, laser measurements. The position- and dose-rate dependencies
of the charge-collection magnitude of the device are determined
empirically and can be combined with a digital reconstruction methodology
to derive an accurate metal-correction factor that permits subsequent
absolute dose-rate response measurements to be derived from laser
measurements alone. Broad-area laser dose-rate testing can thereby be
used to accurately determine the peak transient current, dose-rate
response of semiconductor devices to penetrating electron, gamma- and
x-ray irradiation. |
| Filed: 9/27/2010 |
| Application Number: 12/891569 |
| This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention. |
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