| Abstract: A method is provided for fabricating a backside-illuminated photodetector
in which a device wafer is joined to a readout wafer in an IC
hybridization step. Before the IC hybridization step, the device layer is
defined in the device wafer, and an LPCVD layer is formed over the device
layer. The LPCVD layer may be a passivation layer, an antireflection
coating, or both. The side of the device wafer having the LPCVD layer is
bonded to a handle wafer, the IC is hybridized by mating the device wafer
to the readout wafer, and the handle wafer is then removed, exposing the
LPCVD layer. Because the LPCVD layer is formed before the active devices
are fabricated, it can be made by high-temperature techniques for
deposition and processing. Accordingly, a layer of high quality can be
fabricated without any hazard to the active devices. |
| Filed: 5/2/2019 |
| Application Number: 16/401821 |
| This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention. |
| Attribution for Derwent World Patents Index Records published on Sandia ® Clarivate. All rights reserved. Republication or redistribution of Clarivate content, including by framing or similar means, is prohibited without the prior written consent of Clarivate. Clarivate and its logo, as well as all other trademarks used herein are trademarks of their respective owners and used under license. |