Method of fabricating low-dislocation-density epitaxially-grown films with textured surfaces
| Patent Number: | 8,932,403 |
| Issued: | 1/13/2015 |
| Official Filing: | View the Complete Patent |
| Abstract: | A method for forming a surface-textured single-crystal film layer by growing the film atop a layer of microparticles on a substrate and subsequently selectively etching away the microparticles to release the surface-textured single-crystal film layer from the substrate. This method is applicable to a very wide variety of substrates and films. In some embodiments, the film is an epitaxial film that has been grown in crystallographic alignment with respect to a crystalline substrate. |
| Filed: | 5/23/2011 |
| Application Number: | 13/113,123 |
| Government Interests: | STATEMENT OF GOVERNMENT INTEREST This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention. |