Method of fabricating low-dislocation-density epitaxially-grown films with textured surfaces

Patent Number: 8,932,403
Issued: 1/13/2015
Official Filing: View the Complete Patent
Abstract: A method for forming a surface-textured single-crystal film layer by growing the film atop a layer of microparticles on a substrate and subsequently selectively etching away the microparticles to release the surface-textured single-crystal film layer from the substrate. This method is applicable to a very wide variety of substrates and films. In some embodiments, the film is an epitaxial film that has been grown in crystallographic alignment with respect to a crystalline substrate.
Filed: 5/23/2011
Application Number: 13/113,123
Government Interests: STATEMENT OF GOVERNMENT INTEREST This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention.