Low-dislocation-density epitatial layers grown by defect filtering by self-assembled layers of spheres

Patent Number: 8,425,681
Issued: 4/23/2013
Official Filing: View the Complete Patent
Abstract: A method for growing low-dislocation-density material atop a layer of the material with an initially higher dislocation density using a monolayer of spheroidal particles to bend and redirect or directly block vertically propagating threading dislocations, thereby enabling growth and coalescence to form a very-low-dislocation-density surface of the material, and the structures made by this method.
Filed: 2/18/2009
Application Number: 12/388,103
Government Interests: STATEMENT OF GOVERNMENT INTEREST This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention.