| Abstract: Selectively oxidized vertical cavity lasers emitting near 1300 nm using InGaAsN quantum wells are reported for the first time which operate continuous wave below, at and above room temperature. The lasers employ two n-type Al.sub.0.94 Ga.sub.0.06 As/GaAs distributed Bragg reflectors each with a selectively oxidized current aperture adjacent to the active region, and the top output mirror contains a tunnel junction to inject holes into the active region. Continuous wave single mode lasing is observed up to 55.degree. C. |
| Filed: 5/31/2001 |
| Application Number: 9/871492 |
| This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention. |
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