Laterally injected light-emitting diode and laser diode
| DWPI Title: Laterally-injected light-emitting device for visible apparatus, has aluminum gallium nitride layer that injects electrons into multiple quantum well (MQW) active layer to generate light emission when electrons and holes are combined |
| Abstract: A p-type superlattice is used to laterally inject holes into an III-nitride multiple quantum well active layer, enabling efficient light extraction from the active area. Laterally-injected light-emitting diodes and laser diodes can enable brighter, more efficient devices that impact a wide range of wavelengths and applications. For UV wavelengths, applications include fluorescence-based biological sensing, epoxy curing, and water purification. For visible devices, applications include solid state lighting and projection systems. |
| Use: Laterally-injected light-emitting device e.g. LED and laser diode (LD) for visible apparatus of solid state lighting and projection system. |
| Advantage: Increased hole injection is allowed by utilizing lateral conductivity of superlattice layer. Increased radiative efficiency is enabled since quantum wells are grown upon the semipolar plane which lessens internal polarization fields in quantum wells. Carrier confinement is improved without carrier injection limitations through high bandgap aluminum nitride barriers. Auger recombination effects are reduced through uniform hole population of larger number of wells, while reducing carrier density per well. Optimization of each material is allowed by using distinct materials as a p-contact and a reflector. |
| Novelty: The light-emitting device (20) has An III-nitride MQW active layer that is deposited on the slanted end facet (23) of a p-type superlattice layer (22), and laterally injects holes from the p-type superlattice layer. An n-type aluminum gallium nitride layer (25) injects electrons into the MQW active layer to generate light emission from the MQW active layer when electrons and holes are combined. |
| Filed: 11/20/2014 |
| Application Number: US14549233A |
| Tech ID: SD 11422.1 |
| This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention. |
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