| Abstract: A p-type superlattice is used to laterally inject holes into an
III-nitride multiple quantum well active layer, enabling efficient light
extraction from the active area. Laterally-injected light-emitting diodes
and laser diodes can enable brighter, more efficient devices that impact
a wide range of wavelengths and applications. For UV wavelengths,
applications include fluorescence-based biological sensing, epoxy curing,
and water purification. For visible devices, applications include solid
state lighting and projection systems. |
| Filed: 11/20/2014 |
| Application Number: 14/549233 |
| This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention. |
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