Ion-implanted thermal barrier

Patent Number: 10,418,304
Issued: 9/17/2019
Official Filing: View the Complete Patent
Abstract: Ion implantation can be used to define a thermal dissipation path that allows for better thermal isolation between devices in close proximity on a microelectronics chip, thus providing a means for higher device density combined with better performance.
Filed: 8/21/2018
Application Number: 16/107,470
Government Interests: STATEMENT OF GOVERNMENT INTEREST This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention.