Hybrid CMOS-MEMS devices adapted for high-temperature operation and method for their manufacture

Patent Number: 10,214,415
Issued: 2/26/2019
Official Filing: View the Complete Patent
Abstract: A silicon carbide based MOS integrated circuit is monolithically integrated with a suspended piezoelectric aluminum nitride member to form a high-temperature-capable hybrid MEMS-over-MOS structure. In the integrated structure, a post-MOS passivation layer of silicon carbide is deposited over the MOS passivation and overlain by a structural layer of the MEMS device. Electrical contact to refractory metal conductors of the MOS integrated circuit is provided by tungsten vias that are formed so as to pass vertically through the structural layer and the post-MOS passivation layer.
Filed: 3/2/2018
Application Number: 15/910,531
Government Interests: STATEMENT OF GOVERNMENT INTEREST This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention.