Highly aligned vertical GaN nanowires using submonolayer metal catalysts
| Patent Number: | 7,745,315 |
| Issued: | 6/29/2010 |
| Official Filing: | View the Complete Patent |
| Abstract: | A method for forming vertically oriented, crystallographically aligned nanowires (nanocolumns) using monolayer or submonolayer quantities of metal atoms to form uniformly sized metal islands that serve as catalysts for MOCVD growth of Group III nitride nanowires. |
| Filed: | 10/3/2007 |
| Application Number: | 11/866,684 |
| Government Interests: | STATEMENT OF GOVERNMENT INTEREST This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention. |