|Abstract: ||Tailored doping of barrier layers enables balancing of the radiative
recombination among the multiple-quantum-wells in III-Nitride
light-emitting diodes. This tailored doping enables more symmetric
carrier transport and uniform carrier distribution which help to reduce
electron leakage and thus reduce the efficiency droop in high-power
III-Nitride LEDs. Mitigation of the efficiency droop in III-Nitride LEDs
may enable the pervasive market penetration of solid-state-lighting
technologies in high-power lighting and illumination.